FCPF190N60E
Manufacturer:
On Semiconductor
Mfr.Part #:
FCPF190N60E
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 39 W 650 V Continuous Drain Current (ID):20.6 A 82 nC
| Parameter | Value |
|---|---|
| Gate Charge | 82 nC |
| Gate to Source Threshold Voltage | 3.5 V |
| Continuous Drain Current (ID) | 20.6 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 190 mΩ |
| Input capacitance | 3.175 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 39 W |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 3796
Distributors
pcbx
pcbxUnit Price$2.27753
Ext.Price$2.27753
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.27753 | $2.27753 |
| 10 | $1.35763 | $13.57630 |
| 25 | $1.34090 | $33.52250 |
| 50 | $1.32437 | $66.21850 |
| 100 | $1.30804 | $130.80400 |
| 300 | $1.26014 | $378.04200 |
| 500 | $1.21400 | $607.00000 |
| 1000 | $1.16441 | $1164.41000 |